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Terahertz generation in vanadium dioxide films undergoing metal-insulator phase transitionдоклад на конференции
- Авторы: Solyankin P.M., Esaulkov M.N., Xi-Cheng Zhang, Shkurinov A.P., Qin Luo, Sidorov A.Yu
- Международная Конференция : 40th International Conference on Infrared, Millimeter and Terahertz Waves
- Даты проведения конференции: 23-29 августа 2015
- Дата доклада: 27 августа 2015
- Тип доклада: Устный
- Докладчик: не указан
- Место проведения: Гонконг, Hong Kong
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Аннотация доклада:
Generation of terahertz (THz) radiation was observed in epitaxial VO2 films grown on R- and C-cut sapphire both above and below the metal-insulator phase transition temperature. Polarization analysis of the emitted THz radiation reveals strong in-plane anisotropy of the conductive phase of VO2 which is not observed for insulating phase of VO2, generation efficiency in conductive phase was up to 30 times higher than that for insulating phase. The THz generation process is attributed to the transient photocurrent and to the χ(2) based nonlinear interaction.
- Добавил в систему: Шкуринов Александр Павлович