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The study of plasma processing of low-k dielectrics involves several fields of research. The detailed understanding of mechanisms of elementary pro-cesses that occur under the irradiation by low-energy (50–200 eV) ions is required for optimization of the patterning technology. The dielectric con-stant of modern low-k films is closely related to their porosity and pore sizes, so analyzing how the intensity of physical sputtering and the ma-terial structure depend on these parameters may reveal potential mecha-nisms of changes in the chemical and physical properties of SiOCH films.