ИСТИНА

The etching rate of low-k film under neutral F bombardment was calculated as a function of porosity with help of the binary collision approximation based on the quantum-mechanical cross sections. Simulation showed the five times increase of the rate when chemical etching mechanism is added to the pure sputtering one. The authors expect the obtained results to be of help in the field of plasma processing for deep trench modeling in organic silicate and hyperconnected molecular glass films.