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Results regarding bifacial low concentrator thin n-type Ag free Cz silicon solar cells based on Indium-Tin-Oxide/(p+nn+)Cz-Si/Indium-Fluorine-Oxide structure are presented. Both surfaces of the cells were textured. The (p+nn+)Cz-Si structures were produced by diffusion of boron and phosphorus from deposited B- and P-containing glasses followed by etch-back. Transparent conducting oxide (TCO) films which act as passivating and antireflection electrodes were deposited by ultrasonic spray pyrolysis method. Front/rear contact grids of cooper wire were attached by a low-temperature (160 °C) lamination method simultaneously to the front/rear TCO film and to the commutation ribbons, which are located outside of the structure. The shadowing from the contacts was of ~4.5%. The resulting solar cells showed front/rear efficiencies of 16.7–16.9%/16.3–16.5% respectively at 1-3 suns (bifaciality of ~98%). For the albedo of 20–50% LGCell produce such amount of energy that can be produced by a monofacial solar cell with an efficiency of 20–24.9%.