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We will survey early and recent experimental results both ours and others of magnetic properties study of dilute magnetic oxide semiconductors, focusing on Me-doped titanium dioxide (Me=Co, V, Fe, Mn). Room temperature ferromagnetism was observed in thin films prepared by RF sputtering, but their magnetic properties appeared to be quite different. Magnetic moments in case of TiO2-:Со are mostly associated with local polarization of Co ions and induced defects. There is an evidence of intrinsic ferromagnetism in the case of low Co content (<1 at.%). Room temperature ferromagnetism correlates with a resistivity range depending on doping level. A correlation between magnetization and concentration of the negatively charged defects in thin films was also found. The origin of room temperature magnetism in these systems is discussed