ИСТИНА

The superlattices of silicon nitride and silicon oxide layers with 1 to 5 nm thickness and alternating stoichiometry were prepared by plasma-enhanced chemical vapor deposition. Silicon nanocrystals were formed in the silicon-rich layers of the superlattices after annealing at 1150 °C. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ~1.4 eV, due to exiton recombination in silicon nanocrystals. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect.