ИСТИНА

It is known that etching rate of low-k films in CF4 plasma depends significantly on VUV emission from plasma, interaction of atomic fluorine and CF3+ ions with film surface. However, a quantitative input of every separate mechanism is still unknown. Our simulations are supposed to shed light on such details. In addition, the temperature effect, namely, how the etch rate in this plasma depends on film temperature, is not properly investigated. The authors expect the obtained results to be of help for better understanding of the role of main etching mechanisms and temperature on the etch rate.