ИСТИНА

Under external stress, variation of small gaps in a quantum well energy spectrum of heterostructures, grown on the base of wide gap semiconductors, may strongly transform their physical properties. It was shown earlier, that under uniaxial compression P=5 kbar along [110] direction the electroluminescence spectrum of p-AlGaAs/GaAsP/n-AlGaAs laser diode, emitting in 808 nm, demonstrates rather moderate blue shift up to 25 meV, determined by the fundamental gap increase under compression. Going along with this effect, according to the numerical calculations represented in this work, really dramatic changes could take place in correlation between TM and TE polarization modes of the emitting light due to evolution of small gaps in GaAsP quantum well.