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Characteristics simulation of single-electron transistor based on the molecule with accentuated single-atom Rh detached charge centerдоклад на конференции
- Авторы: Parshintsev A.A., Soldatov E.S., Shorokhov V.V.
- Международная Конференция : International Conference "Micro- and nanoelectronics - 2016", October 3 - 7 , 2016, Moscow-Zvenigorod, Russia
- Даты проведения конференции: 3-7 октября 2016
- Дата доклада: 6 октября 2016
- Тип доклада: Стендовый
- Докладчик: Parshintsev A.A.
- Место проведения: Москва- Звенигород, Russia
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Аннотация доклада:
In this work transport characteristics of SET based on the molecule Rh(tpy-C4H4-O-C(O)-(CH2)4-C3H5S2)2 were investigated by computer simulation. Single-electron energy levels in various charge states were calculated. Analytical parametric model for obtaining the molecule energy spectra was proposed. I-V curves at different temperatures and stability diagrams of the SET were calculated using Monte-Carlo simulation.
- Доклад на конференции выполнен в рамках проекта (проектов):
- Добавил в систему: Солдатов Евгений Сергеевич