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We studied the photoelectromagnetic (PEM) effect induced by laser terahertz radiation in Pb1-xSnxTe films in the composition range x = (0.15 - 0.45), for which a transition from the trivial phase to the topological crystalline insulator phase occurs. The films had the crystallographic orientation <111>, for which appearance of topologically nontrivial surface states is expected. It is shown that in the trivial phase the amplitude of the PEM effect is determined by the power of the incident radiation, while in the topological phase the amplitude is proportional to the flux of laser radiation quanta. Possible mechanism of the effect is discussed.