ИСТИНА

It was established that implanted Ge nanostructures were amorphous. Irradiation of nanostructures by exciting lasers with an intensity exceeding threshold value leads to heating and subsequent local crystallization of the irradiated regions. The dependence of the crystallization thresholds on the conditions of ion implantation and the wavelength of the probe laser was found. Using the Stokes to anti-Stokes ratio, the local heating temperature was estimated. The results obtained will help to evaluate the thermal conductivity of the nanoporous layers. Such Ge structures can have potential application in thermoelectric elements.