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In this paper, we present a complex comparison of the effect of pulses of different durations (from 0.1-0.2 ps to 1.2 ps) of the near (1.24 μm) and middle (4.6 μm) infrared on transparent dielectrics (MgF2) and semiconductors (Si) under tight (NA = 0.85) focusing of laser radiation into the bulk of the material.