ИСТИНА

Here we adopted spin-coating, Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS) techniques for the fabrication of BTBT-based monolayer OFETs. Disiloxane disubstituted derivative of BTBT – 1,3-bis[11-(7-hexyl[1]benzothieno[3,2-b][1]benzothien-2-yl)undecyl]-1,1,3,3-tetramethyldisiloxane, O-(Si-Und-BTBT-Hex)2, which is stable under normal atmospheric conditions, has been used as an active layer in these OFETs.The linear and saturated mobilities, estimated from these measurements, were almost identical in the range of 10-2 cm2/Vs. The maximum value obtained was 4·10-2 cm2/Vs for the device which has been fabricated by spin-coating technique. These OFETs show on/off current ratio up to 106 and were found to be stable after half-year storage under ambient conditions that enables using this organic semiconducting compound for large-area electronics fabrication.