ИСТИНА

The experiments show that the parameters of silicon solar cells (SC), obtained by means of pulsed testers, measuring the light I-V curve in one lamp flash, depend on the duration of this measurement. In the case when duration of measurement is ����t=1ms, the obtained value of efficiency for SC with high effective minority carrier lifetime ���� (~500����s), may be significantly (up to 2.5% absolute) lower than the stationary value. The magnitude of the SC efficiency reduction decreases with ���� lessening. The cause of incorrect data from pulsed testers has fundamental origin and conditioned by the fact that during dynamic, nonstationary measurement, light I-V curves are distorted by the influence of diffusion capacitive component. The value of capacitive component for high-efficiency solar cells with high ���� is greater. An analytical study of dynamic I-V curve transforming subject to applied voltage scanning speed is performed for the case when the voltage on p-n junction changed with steady speed. Experimental results are explained by means of analytical equations, describing the transformation of dynamic light I-V curve. The quasi-steady-state criterion is derived, limiting the voltage changing speed. Thus, to provide the correctness of parameters of SC obtained by means of pulsed testers, the duration of measurement ����t should pass the criterion: ����t >>40����.