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Numerical calculations of the optical energy gap and the optical gains gTE, gTM of TE and TM polarization modes in p-AlxGa1-xAs/GaAs0.84P0.16/n-AlxGa1-xAs laser diode nanostructure are carried out for uniaxial compression up to P = 10 kbar along in-plane and normal to a heterostructure directions at temperature interval 77 K – 300 K.