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Properties of extremely narrow gaps between electrodes of molecular transistorдоклад на конференции
- Авторы: Dagesyan S.A., Snigirev O.V., Soldatov E.S., Stepanov A.S.
- Международная Конференция : 4th International Conference on Superconductivity and Magnetism (ICSM2014)
- Даты проведения конференции: 2014
- Тип доклада: Устный
- Докладчик: Snigirev O.V.
- Место проведения: Antalya, Turkey, Turkey
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Аннотация доклада:
An electron transport through the extremely small gaps of 1-5 nm wide formed in narrow and thin gold nanowires by electromigration method is studied in this work at various temperatures. A careful investigation of the final stage of a gap formation have shown a quantum character of nanowire conductivity on this stage. Analysis of electron transport characteristics through the resulting gaps have shown that regimes of both a direct tunneling between electrodes and a “cold” emission into a barrier region were realized. Keywords: molecular electronics, electromigration, single electronics
- Добавил в систему: Снигирев Олег Васильевич