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Noise properties of SET transistor made from highly doped SOIдоклад на конференции
- Авторы: Presnov D.E., Amitonov S.V., Krupenin V.A., Lotkhov S.V., Zorin A.B., Rudakov V.I.
- Международная Конференция : International Conference “Micro- and Nanoelectronics – 2014” (ICMNE-2014)
- Даты проведения конференции: 2014
- Тип доклада: Устный
- Докладчик: Krupenin V.A.
- Место проведения: “Ershovo” resort, Zvenigorod, Moscow Region, Russia, Russia
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Аннотация доклада:
The single electron tunneling (SET) transistor without conventional tunnel barrier junctions was fabricated from preliminary prepared highly doped silicon on insulator (SOI) film and characterized at temperatures down to 15 mK. Background charge fluctuations turned out to be on the level typical for Al SET transistors fabricated on Si substrate, but substantially lower than those measured in our first SOI-SET samples.
- Добавил в систему: Зорин Александр Борисович