ИСТИНА

The binary and ternary AIII - Bv semiconductor solid solutions and their intermetallic compounds are widely used in different fields of industry. AIIIBV compounds are the nearest electronic analogous of silicon and germanium compounds. They belong to diamond-like group of semiconductor materials. All of them, except for In, Ga and Al nitrides, have cubic crystalline structure of zinc blender - sphalerite, whereas wurtzite HCP -structure is characteristic for nitrides. Presented work is devoted to the investigation of composition and thermodynamic characteristics of binary Ga-Sb, Al-Sb, In-Sb, In - P, Ga-P, B-P, Al-P alloys. This investigation was carried out using the thermodynamic modeling method [1]. As a software the program complex TERRA was used [2]. Modeling was executed in atmosphere of argon at the common pressure of P = 105 Pa and temperature and concentration intervals, corresponding to regions of liquid state on phase diagrams of above - indicated binary systems [3]. The activities of components, integral and partial excess Gibbs energies, integral excess enthalpies, entropies and equilibrium composition of melts were obtained. It was established, that the activities of the components have big negative deviations from Raol's low. Concentration dependencies of integral excess Gibbs energies, entropies and enthalpies are no monotonous. These facts justify, that strong interaction between atoms of different sorts takes place. References: 1 N.A. Vatolin, G.K. Moiseev, B.G. Trusov. Thermodynamic modeling in high -temperature inorganic systems, Metallurgia, Moscow, 1994 (in Russian). 2 B.G. Trusov. Vestnik MGTU im. N. Baumana, 2012, p.240-249 (in Russian). 3 Phase diagrams of binary metallic systems: Handbook. In 3 vol. Edited by N.P. Ljakishev, Mashinostroenie, Moskow, 1997(in Russian).