ИСТИНА |
Войти в систему Регистрация |
|
ИПМех РАН |
||
Blank-chips for molecular transistor were created using sputtering technology with focused ion beam. Sputtering can be characterized as a process with high speed of production, great reproducibility, soft requirements for prior lithographic operations and pretty real possibilities to decrease a gap’s width. Optimal parameters for sputtering of metal electrodes were found, so it is possible to create a 30 nm gaps suitable for production of system with overhanging electrodes.