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Formation of nanoelectrodes for high temperature single-electron sensors доклад на конференции
- Авторы: Parshintsev A.A., Snigirev O.V., Soldatov E.S.
- Международная Конференция : International Conference “Micro- and Nanoelectronics -2012”, ICMNE-2012
- Даты проведения конференции: 2012
- Тип доклада: Стендовый
- Докладчик: Parshintsev A.A.
- Место проведения: Москва, Эвенигород, Russia
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Аннотация доклада:
The technique of the creation of single-electron high temperature molecular transistor electrodes was developed. Such electrodes are appropriate to the creation of high temperature single electron transistor with an island of 2-3 nm size. Optimal parameters for thin and narrow metal nanowires were defined. Samples of nanowires that provide obtaining of sub-5 nm gaps between electrodes were made.
- Добавил в систему: Солдатов Евгений Сергеевич