ИСТИНА

Main fundamental parameter that determines rectifier diode frequency except its geometry is minor charge carrier lifetime in active regions and its spatial distribution. Lifetime value depends on characteristics of recombination centres in semiconductors, such as energy level in forbidden zone, electrons and holes capture cross sections and concentration. An optimum and stable in time recombination centres distribution in welding diode structure will provide needed fast and soft reverse recovery characteristics, low forward voltage drop, low leakage, low power losses and temperature swing during working cycle, high reliability. In this work (the unique identifier of the project RFMEFI58415X0016) an optimum proton irradiation regimes were determined to provide more than 20 kHz frequency, very high softness factor up to 5, leakage current lower than 1 uA for 50 mm diameter 7 kA/400 V nano-Ag sintered welding diode Al/Si/Mo structure. Silicon diode with such parameters very suitable for high frequency resistance welding machines of new generation for robotic welding. Today there is no welding diode with such parameters on the global market.