ИСТИНА

An RRAM flip-flop rcell memory of the type having a write address decoder, a read address decoder, a set of n flip flops, one AND gate associated with each flip flop in the set, a set of w OR gates where each of the w OR gates in the set has n inputs, the improvement comprising only one write address decoder, and replacing the read address decoder and the set of AND gates and the set of OR gates with no more than one multiplexor, thereby providing a reduction in a path length from an rcell memory input to an rcell memory output and thereby improving timing of the rcell memory, while reducing fanout size of the rcell. In a preferred embodiment, the multiplexor includes fewer than w OR gates, and fewer than n AND gates, and two decoders, which are commonly connected to outputs of the n flip flops.