Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above -50 °Cстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 28 февраля 2018 г.
Аннотация:The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is studied in a
periodic mesoporous oxide (PMO) with ∼34 % porosity and k-value ∼2.3. At a partial pressure of 3 mT,
the onset of micro-capillary condensation occurs around +20 °C and the low-k matrix is filled at −20 °C.
The condensed phase shows high stability from −50 < T ≤−35 °C, and persists in the pores when the
low-k is exposed to a SF6-based plasma discharge. The etching properties of a SF6-based 150W-biased
plasma discharge, using as additive this new HBPO gas, shows that negligible damage can be achieved
at −50 °C, with acceptable etch rates. The evolution of the damage depth as a function of time was
studied without bias and indicates that Si-CH3 loss occurs principally through Si-C dissociation by VUV
photons.