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Photophysical and photochemical effects in ultrafast laser patterning of CVD grapheneстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 20 марта 2018 г.
- Авторы: Bobrinetskiy Ivan, Emelianov Aleksei, Nasibulin Albert, Komarov Ivan, Otero Nerea, Romero Pablo M.
- Журнал: Journal of Physics D
- Том: 49
- Год издания: 2016
- Первая страница: 41LT01
- DOI: 10.1088/0022-3727/49/41/41lt01
- Аннотация: The micro-scale patterns in graphene on Si/SiO2 substrate were fabricated using ultrashort 515 nm laser pulses. For both picosecond and femtosecond laser pulses two competitive processes, based on photo-thermal (ablation) and photochemical (oxidation/etching) effects, were observed. The laser-induced etching of graphene starts just below the threshold energy of graphene ablation: 1.7 nJ per 280 fs pulse and 2.7 µJ per 30 ps pulse. Whilst etching is not sensitive to thermal properties of graphene and provides uniform patterns, the ablation, in contrast, is highly affected by defects in the graphene structure like wrinkles and bilayer islands. The mechanisms of ultrafast laser interaction with graphene are discussed.
- Добавил в систему: Миронович Кирилл Викторович