Second harmonic generation induced by mechanical stresses in siliconстатья
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Дата последнего поиска статьи во внешних источниках: 9 июля 2015 г.
Аннотация:The optical second-harmonic generation induced by the external mechanical tension of the (001 ) silicon surface has been detected. A change in the spectrum of the second harmonic, which is caused by the modification of the band structure of silicon near the critical points E’o and E1 under mechanical tension, has been observed. The direct contribution to the optical second harmonic from changes in the band structure of silicon under tension is experimentally separated from the electric-field-induced co ntribution associated with the redistribution of the surface charge under the action of mechanical stresses.