Conductivity of structures with silicon nanocrystals in oxide matrixстатья
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 ноября 2017 г.
Аннотация:The current–voltage characteristics and temperature dependences of conductivity (in the temperature range from 210 to 330 K) of the structures containing silicon nanocrystals in the SiO2 matrix have been measured. Samples with various numbers of layers and nanocrystal sizes have been investigated. Based on the results, possible mechanisms of the charge carrier transfer in the studied structures at different temperatures have been analyzed.