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Impurity photoconductivity and electrical properties of Pb_{1-x-y}Ge_{x}Sn_{y}Te doped with indiumстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Lebedev A.I., Abdullin Kh A.
- Журнал: Physica status solidi (A): Applied research
- Том: 91
- Номер: 1
- Год издания: 1985
- Издательство: Academic Press
- Местоположение издательства: United States
- Первая страница: 225
- Последняя страница: 234
- DOI: 10.1002/pssa.2210910129
- Аннотация: The impurity photoconductivity (PC) spectra as well as the electrical properties of Pb1−x−yGexSnyTe (In-doped) mixed crystals (x ≦ 0.16, y ≦ 0.25, NIn = (0.17 to 2) at%) are studied. The PC spectra have a complicated structure and consist of four bands. The edge energy of positive PC exceeds significantly the energy separation between the Fermi level and the conduction band. A narrow band is observed in the PC spectra, which is attributed to interimpurity transitions; the position of this band depends strongly on the rhombohedral lattice distortion below Tc. The negative-U model of In centers is shown to be adequate to experimental results. The energy spectrum of a pair of In atoms is calculated and the characteristic energies |U| and W involved are obtained.
- Добавил в систему: Лебедев Александр Иванович