Effect of different impurity atoms on 1/fα tunneling current noise characteristics on InAs (110) surfaceстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The results of UHV STM investigations of tunneling current noise spectra in the vicinity of individual impurity atoms on the InAs(110) surface are reported. It was found that the power law exponent of 1/fα noise depends on the presence of an impurity atom in the tunneling junction area. This is consistent with the proposed theoretical model considering tunneling current through a two-state impurity complex model system taking into account many-particle interaction.