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Electron-phonon energy relaxation time in thin strongly disordered titanium nitride filmsстатья
- Авторы: Kardakova A.I., Coumou P.C.J.J, Finkel M.I., Morozov D.V., An P.P., Goltsman G.N., Klapwijk T.M.
- Журнал: IEEE Transactions on Applied Superconductivity
- Том: 25
- Номер: 2400404
- Год издания: 2015
- Издательство: Institute of Electrical and Electronics Engineers
- Местоположение издательства: Piscataway, NJ, United States
- DOI: 10.1109/TASC.2014.2364516
- Аннотация: We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τeph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T-3 temperature dependence, which are consistent with values of τeph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
- Добавил в систему: Гольцман Григорий Наумович