Specific Features of Photoelectric Properties of Layered Films of Amorphous Hydrogenated Siliconстатья
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Дата последнего поиска статьи во внешних источниках: 12 октября 2015 г.
Аннотация:Temperature dependences of photoconductivity of layered and conventional undoped films of
amorphous hydrogenated silicon have been studied within a wide range of temperatures (130–420 K) and
illumination intensities (0.1–60 mW cm–2). It is established that a higher photosensitivity of layered films
compared with conventional films is governed by a low dark conductivity of layered films as a consequence of
a deeper position of the equilibrium Fermi level in the band gap and the absence of temperature quenching
of photoconductivity in these films. It is shown that these specific features of electrical and photoelectric prop
erties of layered films can be attributed to a low concentration of silicon dangling bonds in comparison with the
concentration of oxygenrelated acceptor centers, which feature a larger capture coefficient for holes.
DOI: 10.1134/S1063782610120079