Аннотация:A sample of the GaN/SiC hexagonal semiconductor compound and a sample of SiC partially affected by a pore generation procedure were studied by the small-angle x-ray scattering (SAXS) technique using the Cu Kα1 wavelength. The assumption of a locally ordered network formed by domain walls within the GaN/SiC compound is formulated. The typical sizes of domains in the sample are estimated as 50–80 nm. Presence of low-dimensional (mainly linear) components in the GaN/SiC sample and the porous part of the SiC sample is shown. The hypothesis of chain-like clusters forming in hexagonal semiconductors is confirmed.