Heavy ions irradiated crystal GaAs as an active non-linear matrix for the generation of THz radiationстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 11 ноября 2015 г.
Аннотация:The electromagnetic irradiation of Terahertz (THz) frequency could be obtained by means of optical rectification, using the media with non-linear properties. We demonstrated that the semiconductor crystal (GaAs) with heavy-ion induced defects (irradiation by Kr ions with the energy of 90 MeV up to a fluence of 10 10 cm - 2 ) could be used for this process. Laser ( λ = 795 nm ) pulse signal ( τ = 100 fs ) was transformed into a signal of THz range by means of difference generation. The spectrum of the THz waveform was investigated and high efficiency of this process in the range 1–3 THz was shown. The calculation of non-linear susceptibility demonstrated the dependence of this parameter on carrier concentration and temperature.