Structure of Si Near-surface Layer after 64Zn+ Ion Implantation at Elevated Temperatureстатья
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Дата последнего поиска статьи во внешних источниках: 20 апреля 2016 г.
Аннотация:The results of studying the structure and composition of the surface layer of a Si plate after 64Zn+ ion implantation and thermal annealing in oxygen are presented. The ions are implanted into a substrate heated to a temperature of 400°C. Radiation defects and profiles of implanted Zn and oxygen diffused into the substrate are studied by means of 1.7-MeV He+-ion Rutherford backscattering spectroscopy using the channeling technique. The implanted layers are visualized using high-resolution transmission electron microscopy in combination with electron diffraction and energy dispersive microanalysis. Atomic-force microscopy is used to study the surface morphology.