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TE/TM polarization modes ratio in p-AlGaAs/GaAsP/n-AlGaAs laser diode emission under uniaxial stressтезисы доклада
- Авторы: Bogdanov E.V., Minina N.Ya
- Сборник: Abstracts. 6th Int. Conf. on Materials Science and Condensed Matter Physics. Chisinau, September 11-14 2012
- Тезисы
- Год издания: 2012
- Место издания: Institut of Apllied Physics, Chisinau, Moldova Chisinau, Moldova
- Первая страница: 207
- Аннотация: It is shown that in a double heterostructure laser diode with “light-hole-up” configuration calculated optical gain of a predominant at P = 0 TM mode reveals strong (up to 3 times) decrease under uniaxial compression P = 10 kbar while optical gain of TE mode demonstrates increase up to an order of magnitude. In a certain correlation between quantum well (QW) width and compositions the lasing mode changes from TM to TE one. This effect is connected with the light hole (LH) and heavy hole (HH) size levels shifts and strong LH and HH mixing under compression. The influence of pressure is maximal if at P = 0 the two upper levels in QW are close to each other in energy scale. This result may be useful for a fine tuning of TE-TM polarization modes in laser diode structure emission.
- Добавил в систему: Богданов Евгений Владимирович