High-rate high-density ICP etching of germanium

Lagov, P.B.; Maslovsky, V.M.; Pavlov, Y.S.; Rogovsky, E.S.; Drenin, A.S.; Skryleva, E.A.; Lednev, A.M.

Авторы: Lagov P.B., Maslovsky V.M., Pavlov Yu S., Rogovsky E.S., Drenin A.S., Skryleva E.A., and Lednev A.M.
Сборник: XII-th International Conference Ion Implantation And Other Applications Of Ions And Electrons 18–21 June 2018
Тезисы
Год издания: 2018
Место издания: Kazimierz Dolny, Poland
Первая страница: 107
Последняя страница: 107
Аннотация: Nowadays Ge is one of the main substrate materials for multijunction III-V compound solar cells (MJ SC). Usually, Ge substrate thickness is about 150±20 µm, while total thickness of multijunction part is about 5 µm. MJ SC are used to power spacecraft and in concentrator photovoltaic (CPV) systems. Generally space SC has an area of about 30 cm2. MJ SC for CPV receiver has an area of 0.1 to 1 cm2. Anyway MJ SC operates in severe conditions accompanied by intensive solar irradiation and variations in temperature over a wide range. MJ SC could be improved by substrate thinning at the post-growth stage of fabrication. As it is known, the thermal conductivity of Ge decreases with temperature and with vacancy concentration increasing. Therefore, reducing the thickness of the substrate will decrease thermal resistance and provide more comfortable thermal conditions for operation and improve the energy/mass ratio of MJ SC. The most promising dry process for this purpose is high-rate inductively coupled plasma (ICP) etching. As it was found the etch rate of Ge increases linearly from 11.9 to 19.4 µm/min and surface roughness decreases as the ICP power level increases from 400 to 650 W at SF6 flow rate of 300 sccm. Also, etch rate of Ge increases by a power law from 8.0 to 16.7 µm/min as the SF6 flow rate increase from 50 to 300 sccm at ICP power of 570 W. OES and XPS studies were carried out using NIST databases. Some experimentally observed by OES lines fit to calculated (Ritz) lines. The more clear and good conformity with sufficient amplitude show lines: for sulfur (415.63+), (703.5+), (726.9+)/(727.1+) and fluorine (794.8).
Добавил в систему: Лагов Петр Борисович

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