On the nature of photo-induced defects and recombination mechanisms in light-soaked a-Si:H filmsстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Results of measurements of the temperature dependence of the photoconductivity and intensity-current characteristics of undoped a-Si:H films light-soaked at various temperatures are presented. The observations support the assumption of the introduction of t-centers in addition of the conventional dangling bonds playing an important role in the recombination. The electronic energy spectrum and recombination properties of intimate dangling-bond pairs are discussed and it is argued that such complexes may be the t-centers introduced at light soaking.