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Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wellsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 6 декабря 2018 г.
- Авторы: Rumyantsev V.V., Kulikov N.S., Kadykov A.M., Fadeev M.A., Ikonnikov A.V., Kazakov A.S., Zholudev M.S., Aleshkin V.Ya, Utochkin V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
- Журнал: Semiconductors
- Том: 52
- Номер: 11
- Год издания: 2018
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 1376
- Последняя страница: 1380
- DOI: 10.1134/S1063782618110234
- Аннотация: We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 mkm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 mkm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is deter- mined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.
- Добавил в систему: Иконников Антон Владимирович