Metal-semiconductor-insulator transitions in R3Ni compounds induced by hydrogenationстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Electrical resistivity and ac magnetic susceptibility measurements of R 3Ni and their hydrides R 3NiH x were carried out. It is shown that the conductivity of R 3NiH x compounds with a large amount of hydrogen have semiconductor and insulator conductivity type as compared with metallic conduction in the original compounds R 3Ni. The resistivity of the original compounds is discussed on the basis of a conduction electron scattering model. Strongly modified transport processes of the hydrides are discussed on basis of a ‘hopping’ model.