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Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systemsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Suyatin D.B., Soldatov E.S., Maximov I.A., Montelius L.b., Samuelson L.b., Khomutov G.B., Gubin S.P., Sergeev-Cherenkov A.N.
- Сборник: Proceedings of SPIE - The International Society for Optical Engineering
- Год издания: 2003
- Первая страница: 327
- Последняя страница: 329
- DOI: 10.1117/12.514284
- Аннотация: Gold nanoelectrodes with gaps of less than 10 nm were formed by conventional E-beam lithography on silicon substrates covered by Al 2O3. Molecular films were deposited on the electrodes by Langmuir-Shaefer technique. The I-V curves of such systems show a suppressed conductance indicating a correlated electron tunnelling through the system. All measurements were made at room temperature.
- Добавил в систему: Хомутов Геннадий Борисович