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Dependence of the Exchange Bias on the Thickness of Antiferromagnetic Layer in the Trilayered NiFe/IrMn/NiFe Thin-filmsстатья
Дата последнего поиска статьи во внешних источниках: 24 мая 2016 г.
- Авторы: Gritsenko Ch, Dzhun I., Chechenin N., Babaytsev G., Rodionova V.
- Журнал: Physics procedia
- Том: 75
- Год издания: 2015
- Издательство: Elsevier
- Местоположение издательства: United States
- Первая страница: 1066
- Последняя страница: 1071
- DOI: 10.1016/j.phpro.2015.12.176
- Аннотация: The influence of the antiferromagnetic layer thickness on the magnetic properties of the trilayered thin-film structures with the exchange bias phenomenon was studied in the temperature range from 100 up to 295 K. Dependences of the coercive force and exchange bias field on AF-layer thickness were analyzed for all structures with AF layer thickness from 2 nm up to 50 nm at room and low temperatures. The explanation in terms of the anisotropy and thermal energies competition was given for disclosure of an exchange bias for structures with 2 nm AF layer thickness at low temperatures
- Добавил в систему: Чеченин Николай Гаврилович