Thickness dependent electronic structure of exfoliated mono- and few-layer 1T$\prime$-MoTe2статья

• Авторы:
• Журнал: Physical Review Materials
• Том: 2
• Номер: 10
• Год издания: 2018
• DOI: 10.1103/physrevmaterials.2.104004
• Аннотация: Semimetallic MoTe2 has recently generated enormous attention due to its topological properties, large magnetoresistance, superconductivity, suitability for homojunction phase patterning, and, in particular, metalinsulator transition of thin layers, possibly indicating a quantum spin hall state. These observations prove the potential of MoTe2 for thin film applications and call for systematic investigations of the thickness dependent electronic structure. Here we apply angle-resolved photoemission spectroscopy supported by band structure calculations to elucidate the electronic structure of exfoliated 1T'-MoTe2. Electron and hole pockets of the inverted conduction and valence bands near Gamma are resolved down to the monolayer. The Fermi level of exfoliated 1T'-MoTe(2 )monolayers lays within the electron pockets indicating intrinsic n-type doping. E-F shifts downward with increasing thickness consistent with a surface driven mechanism. Our study provides insight on the electronic properties of semimetallic 1T'-MoTe(2 )as an indispensable ingredient for future thin film functionalization.
• Добавил в систему: Морозов Игорь Викторович