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Structural aspects in substrate materials for epitaxial growth Ga-nitride thin filmsтезисы доклада
- Авторы: Volkova E.A., Leonyuk N.I.
- Сборник: Abstr. book of The 19th European Crystallographic Meeting
- Тезисы
- Год издания: 2000
- Место издания: Nancy, France
- Аннотация: Over fifty various inorganic crystals as well as some of their solid solutions have been considered in search for a replacement substrate. Among them, the main attention was paid to candidates from the viewpoint of phase stability, easy of growth and other physico-chemical properties. The epitaxial relations were examined for some crystallographic orientations of the Ga-nitride and substrates like Al2O3, ZnO MgO, ZrO2, HfO2, MgAl2O4, ZnAl2O4, ZnGa2O4, TiZn2O4, YAlO3, LaAlO3,LaGaO3, LaGaO3, NdGaO3, KTaO3, SrTiO3, Si, SiC. In this connection, the Hartman-Perdok concept was used to estimate the atomic surface topology of the film/substrate interface.
- Добавил в систему: Леонюк Николай Иванович