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Crystallochemical estimation of alternative substrates for epitaxial growth of Ga-nitrideтезисы доклада
- Авторы: Volkova E.A., Leonyuk N.I.
- Сборник: Abstr. Book of The E-MRS IUMRS 2000 Spring Meeting
- Тезисы
- Год издания: 2000
- Место издания: Strasbourg, France
- Первая страница: K971
- Аннотация: The epitaxial relations were examined for some crystallographic orientations of the Ga-nitride and substrates like Al2O3, ZnO MgO, ZrO2, HfO2, MgAl2O4, ZnAl2O4, ZnGa2O4, TiZn2O4, YAlO3, LaAlO3,LaGaO3, LaGaO3, NdGaO3, KTaO3, SrTiO3, Si, SiC. The Hartman-Perdok concept was used to estimate the atomic surface topology of the film/substrate interface. In conclusion, some recent experimental results will be discussed as well.
- Добавил в систему: Леонюк Николай Иванович