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Photoluminescence of SiV centers in single crystal CVD diamondin situdoped with Si from silaneстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 16 января 2019 г.
- Авторы: Bolshakov Andrey, Ralchenko Victor, Sedov Vadim, Khomich Andrey, Vlasov Igor, Khomich Alexander, Trofimov Nikolay, Krivobok Vladimir, Nikolaev Sergei, Khmelnitskii Roman, Saraykin Vladimir
- Журнал: Physica Status Solidy a
- Том: 212
- Номер: 11
- Год издания: 2015
- Первая страница: 2525
- Последняя страница: 2532
- DOI: 10.1002/pssa.201532174
- Аннотация: Homoepitaxial single crystal diamond layers with bright photoluminescence (PL) of silicon-vacancy (SiV) color centers at 738 nm wavelength have been grown on (100) diamond substrates by a microwave plasma CVD using a controlled Si doping via adding silane to CH4-H-2 reaction gas mixture in the course of the deposition process. In the range of the silane concentrations SiH4/CH4 explored, from 0 to 2.4%, the SiV PL intensity shows a nonmonotonic behavior with silane addition, with a maximum at 0.6% SiH4/CH4, and a rapid PL quenching at higher Si doping. The maximum SiV concentration of approximate to 450 ppb in the samples has been determined from optical absorption spectra. It is found that the SiV PL intensity can strongly, an order of magnitude, increase within non-epitaxial inclusions in single crystal diamond film. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Добавил в систему: Хомич Александр Владимирович