Growth of Yb:YAl3(BO3)4 thin films by liquid phase epitaxyстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The epitaxial layers of Yb:YAB were grown from high-temperature solutions by the dipping method. The growth rate of the layers was determined to be within the range of 0.07-0.35 μm for the interval of fluxed melt supercooling (∆T) from 5oC to 20oC The composition and micromorphology of Yb:YAB thin films were studied. Yb concentration in grown films slightly increases from 0.09 to 0.11 with an increase of supercooling/supersaturation. Microrelief of as-grown Yb:YAB films depends on the growth conditions and substrate orientation.