Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturingстатьяИсследовательская статья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 14 февраля 2019 г.
Аннотация:The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser
deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8±0.4 μm2 grain size and 7.3±5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9±0.4 V, and from LRS to HRS at 1.5±0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metaloxide-film RRAM fabrication