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Effect of the Tin Content on the Composition and Optical and Electrical Properties of ITO Films Deposited onto Silicon and Glass by Ultrasonic Spray Pyrolysisстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Untila G.G., Kost T.N., Chebotareva A.B., Timofeyev M.A.
- Журнал: Semiconductors
- Том: 46
- Номер: 7
- Год издания: 2012
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 962
- Последняя страница: 968
- DOI: 10.1134/S1063782612070202
- Аннотация: With the aim of optimizing the properties of tin-doped indium oxide (ITO) films as applied to silicon solar cells, ~100 nm thick ITO films were deposited onto (nn+)Cz–Si and glass substrates by ultrasonic spray pyrolysis in argon at a temperature of 380°C. The relative Sn and In content in the film-forming solution was varied in the range of [Sn]/[In] = 0–12 at %. Optimal parameters are exhibited by the films produced at [Sn]/[In] = 2–3 at % in the solution ([Sn]/([In] + [Sn]) = 5.2–5.3 at % in the film). For such films deposited onto glass substrates, the effective absorptance weighted over the solar spectrum in the wavelength range from 300 to 1100 nm is 1.6–2.1%. The sheet resistance Rs of the films deposited onto silicon and glass is, correspondingly, 45–55 and 165–175 Ω –1. After eight months of storage in air, the resistance Rs of the optimalfilms remained unchanged; for the other films, the resistance Rs increased: for the films on silicon and glass,the resistance Rs became up to 2 and 14 times higher, respectively.
- Добавил в систему: Унтила Геннадий Григорьевич