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Observation of the population inversion of erbium ion states in Si/Si1-xGex : Er/Si structures under optical excitationстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 ноября 2017 г.
- Авторы: Stepikhova M.V., Krasil'nikova L.V., Krasil'nik Z.F., Shengurov V.G., Chalkov V.Y., Zhigunov D.M., Shalygina O.A., Timoshenko V.Y.
- Журнал: Optical Materials
- Том: 28
- Номер: 6-7
- Год издания: 2006
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 893
- Последняя страница: 896
- DOI: 10.1016/j.optmat.2005.09.041
- Аннотация: In this work we present the results of theoretical analysis and experimental studies carried out for Si/Si1-xGex:Er/Si structures considered as the candidates for a laser realization. Analysis of the electromagnetic modes distribution and parameters of Si/Si1-xGex:Er/Si waveguides enabling strong localization of the optical modes in the active Si1-xGex:Er layers is given. The Si/Si(1-x)G(x):Er/Si structures in question were grown by the method of sublimation MBE in germane gas atmosphere. The capability of such a method for producing effectively emitting Si/Si1-xGex:Er/Si structures has been demonstrated. The photoluminescence intensity of the structures produced is comparable with that determined for the uniformly doped Si:Er layers with the external quantum efficiency similar to 0.4%. We show the possibility to achieve the population inversion of Er3+ ion states in Si/Si1-xGex:Er/Si structures under optical excitation. The population inversion of Er3+ states in these structures sets in at the pump density of similar to 0.2 W/cm(2) and reaches its maximal value at similar to 4 W/cm(2), where the concentration of Er3+ ions being inversely populated amounts to similar to 80% of the total concentration of optically active Er ions. (c) 2005 Published by Elsevier B.V.
- Добавил в систему: Тимошенко Виктор Юрьевич