Special features of recombination of nonequilibrium charge carriers in porous silicon with different nanostructure morphologiesстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Photoluminescence of porous silicon with different nanostructure morphologies and silicon monocrystalline wafers used as substrates was studied comparatively. The photoluminescence intensity of mesoporous and nanoporous silicon was established to be related to the excitation intensity by the quadratic and linear dependences, respectively. A model of recombination processes in the semiconductor nanocrystal systems is suggested. The experimental results are in good agreement with the model predictions. (C) 2002 MAIK "Nauka/Interperiodica".