Carrier recombination in silicon quantum wires surrounded by dielectric mediumстатья
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Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
Аннотация:Non-equilibrium carrier dynamics in silicon quantum wires is theoretically investigated taking into account the existence of two coupled subsystems: free carriers and excitons. The filling of space among the wires by dielectric medium results in the decrease in binding energy of excitons and thus their concentration and at the same time in the increase in free carrier concentration. Modification of the relation between the exciton concentration and free carrier density changes the relaxation time of nonequilibrium carriers. The model is experimentally proved using the time-resolved methods of photoluminescence and IR free carrier absorption in porous silicon.